dm c 2 990udj q document number: d s 3 9168 rev. 1 - 2 1 of 9 www.diodes.com september 2016 ? diodes incorporated dm c 2 990udj q new product advance information advance information new product complementary pair enhancement mode mosfet product summary device b v dss r ds(on) max i d max t a = + 25 c q1 20v 0. 99 ? @ v gs = 4.5v 450m a 1.2 ? @ v gs = 2 .5v 400m a 1.8 ? @ v gs = 1.8 v 330m a 2.4 ? @ v gs = 1 .5v 300m a q2 - 20v 1.9 ? @ v gs = - 4.5v - 310m a 2.4 ? @ v gs = - 2 .5v - 280m a 3.4 ? @ v gs = - 1.8 v - 240m a 5 ? @ v gs = - 1 .5v - 180m a description and applications this mosfet is designed to meet the stringent requirements of automotive applications. it is qualified to aec - q101, s upported by a ppap and is ideal for use in : ? general purpose interfacing switch ? power m anagement f unctions ? analog switch features and benefits ? low on - resistance ? very l ow gate threshold voltage , 1.0v max ? low input capacitance ? fast switching speed ? ultra - small surfac e mount package 1mm x 1mm ? l ow package profile, 0.45mm maximum package height ? esd protected gate ? totally lead - free & fully rohs compliant (note 1 & 2 ) ? halogen and antimony free. green device (note 3 ) ? qualified to aec - q101 standards for high reliability ? pp ap capable (note 4 ) mechanical data ? case: sot963 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminal connections indicator: see diagram ? terminals: finish ? matte tin annealed over copper leadframe . solderable per mil - std - 202, method 208 ? weight: 0.027 grams ( approximate ) ordering information (note 5 ) part number case packaging dm c 2990udj q - 7 sot963 10 k /tape & reel dm c2990udj q - 7 b sot963 10k /tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of halogen - and antimony - free, "green" and lead - free. 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . automotive products a re aec - q101 qualified and are ppap capable. refer to http://www.diodes.com/ product_compliance_definitions .html . 5. for packaging details, go to our website at http://www.diodes.com/products/packages.html. marking information d 1 = product type marking code top view sot963 top view schematic and transistor diagram esd protected d1 s 2 d 2 d 1 s 1 g 2 g 1 e3
dm c 2 990udj q document number: d s 3 9168 rev. 1 - 2 2 of 9 www.diodes.com september 2016 ? diodes incorporated dm c 2 990udj q new product advance information advance information new product maximum rating s q1 n - channel ( @t a = + 25c , unless otherwise specified .) characteristic symbol value unit drain - source voltage v dss 20 v gate - source voltage v gss 8 v continuous drain current (note 6 ) v gs = 4.5v steady state t a = + 25 c t a = + 70 ? d 450 350 m a t<5s t a = + 25 ? a = + 70 ? d 520 410 m a continuous drain current (note 6 ) v gs = 1 . 8 v steady state t a = + 25 ? a = + 70 ? d 330 260 m a t<5s t a = + 25 ? a = + 70 ? d 390 310 m a maximum continuous body diode f orward current (note 6 ) i s 440 ma pulsed drain current (note 7 ) i dm 800 m a maximum ratings q2 p - channel ( @t a = +25c, unless otherwise specified.) characteristic symbol value unit drain - source voltage v dss - 20 v gate - source voltage v gss 8 v continuous drain current (note 6 ) v gs = - 4.5v steady state t a = + 25 ? a = + 70 ? d - 310 - 240 m a t < 5s t a = + 25 ? a = + 70 ? d - 360 - 280 m a continuous drain current (note 6 ) v gs = - 1 . 8 v steady state t a = + 25 ? a = + 70 ? d - 240 - 190 m a t < 5s t a = + 25 ? a = + 70 ? d - 280 - 220 m a maximum continuous body diode f orward current (note 6 ) i s - 440 ma pulsed drain current (note 7 ) i dm - 800 m a thermal characteristics ( @t a = +25c, unless otherwise specified.) characteristic symbol value unit total power dissipation (note 6 ) p d 350 mw thermal resistance, junction to am bient (note 6 ) s teady state r ja 3 60 c/w t<5s 270 c/w operating and storage temperature range t j, t stg - 55 to +150 c notes: 6 . device mounted on fr - 4 pcb, with minimum recommended pad layout. 7 . device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%.
dm c 2 990udj q document number: d s 3 9168 rev. 1 - 2 3 of 9 www.diodes.com september 2016 ? diodes incorporated dm c 2 990udj q new product advance information advance information new product electrical characteristics q1 n - channel ( @t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss 20 - - v v gs = 0v, i d = 250a c = + 25c i dss - - 100 n a v ds = 16 v, v gs = 0v - - 50 v ds = 5 v, v gs = 0v gate - source leakage i gss - - 100 n a v gs = 5 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs( th ) 0. 4 - 1.0 v v ds = v gs , i d = 250 a ds(on) - 0.60 0. 99 gs = 4.5v, i d = 1 00ma - 0.75 1.2 v gs = 2.5v, i d = 5 0ma - 0.90 1.8 v gs = 1 . 8 v, i d = 2 0ma - 1.2 2.4 v gs = 1 . 5 v, i d = 1 0ma - 2.0 - v gs = 1. 2 v, i d = 1 ma forward transfer admittance |y fs | 180 850 - m s v ds = 5 v , i d = 125 ma diode forward voltage v sd - 0.6 1.0 v v gs = 0v, i s = 10ma dynamic characteristics (note 9 ) input capacitance c iss - 27.6 - pf v ds = 1 5 v , v gs = 0v , f = 1.0mhz out put capacitance c oss - 4.0 - pf reverse transfer capacitance c rss - 2.8 - pf gate resistance r g - 113 - ds = 0 v, v gs = 0v , f = 1.0mhz total gate charge q g - 0.5 - nc v gs = 4.5 v, v ds = 10 v, i d = 250m a gate - source charge q gs - 0.07 - nc gate - drain charge q gd - 0. 07 - nc turn - on delay time t d( on ) - 4. 0 - ns v dd = 1 5 v, v gs = 4.5 v, r l = 47 , r g = 2 d = 200ma turn - on rise time t r - 3. 3 - ns turn - off delay time t d( off ) - 1 9.0 - ns turn - off fall time t f - 6.4 - ns electrical characteristics q2 p - channel ( @t a = +25c, unless otherwise specified.) characteristic symbol min typ max u nit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss - 20 - - v v gs = 0v, i d = - 250a c = + 25 c i dss - - 100 n a v ds = - 16 v, v gs = 0v - - 50 v ds = - 5 v, v gs = 0v gate - source leakage i gss - - 100 n a v gs = 5 v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs( th ) - 0. 4 - - 1.0 v v ds = v gs , i d = - 250 a ds(on) - 1.2 1 . 9 gs = - 4.5v, i d = - 1 00ma - 1.5 2 .4 v gs = - 2.5v, i d = - 50 ma - 2.1 3.4 v gs = - 1 . 8 v, i d = - 20 ma - 2.5 5 v gs = - 1 . 5 v, i d = - 1 0ma - 4.0 - v gs = - 1. 2 v, i d = - 1 ma forward transfer admittance |y fs | 100 450 - m s v ds = - 5 v , i d = - 125 ma diode forward voltage v sd - - 0. 6 - 1. 0 v v g s = 0v, i s = - 1 0 ma dynamic characteristics (note 9 ) input capacitance c iss - 28.7 - pf v ds = - 1 5 v, v gs = 0v , f = 1.0mhz output capacitance c oss - 4.2 - pf reverse transfer capacitance c rss - 2.9 - pf gate resistance r g - 399 - ds = 0 v, v gs = 0v , f = 1.0mhz total gate charge q g - 0.4 - nc v gs = - 4.5 v, v ds = - 10 v, i d = - 250m a gate - source charge q gs - 0.08 - nc gate - drain charge q gd - 0.06 - nc turn - on delay time t d( on ) - 5.8 - ns v dd = - 1 5 v, v gs = - 4.5 v, r g = 2 d = - 200ma turn - on rise time t r - 5.7 - ns turn - off delay time t d( off ) - 31.1 - ns turn - off fall time t f - 16.4 - ns notes: 8 . short duration pulse test used to minimize self - heating effect . 9 . guaranteed by design. not subject to product testi ng .
dm c 2 990udj q document number: d s 3 9168 rev. 1 - 2 4 of 9 www.diodes.com september 2016 ? diodes incorporated dm c 2 990udj q new product advance information advance information new product 0 0.2 0.4 0.6 0.8 1.0 1.2 0 0.2 0.4 0.6 0.8 1.0 t = a - 55c t = a 25c t = a 85c t = 150c a t = a 125c i , drain current (a) fig. 4 typical on - resistance vs. drain current and temperat ure d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = 4.5v gs r d s(on) , drain - source on - resistance ( ? ) typical characteristics - n - channel 0 0.2 0.4 0.6 0.8 0 0.5 1 1.5 2 2.5 3 v , gate - source voltage (v ) fig. 2 typical transfer characteristics gs v = 5.0v ds t = - 55c a t = a 25c t = a 85c t = a 125c t = a 150c i , d r a i n c u r r e n t ( a ) d i d , drain current (a) (a) 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 t , junction temperature ( c ) fig. 5 on - resistance variation with temperature j r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) i = 150ma d i = 300ma d r d s(on) , drain - source on - resistance ( n or ma lize d ) 0.2 0.4 0.6 0.8 1.0 1.2 0 0.2 0.4 0.6 0.8 i , drain-source current fig. 3 typical on-resistance vs. drain current and gate voltage d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = 1.8v gs v = 2.5v gs v = 4.5v gs 0 0.2 0.4 0.6 0.8 0 0.5 1 1.5 2 2.5 3 3.5 4 v , drain-source voltage (a) fig. 1 typical output characteristics ds i , d r a i n c u r r e n t ( a ) d v = 1.2v gs v gs = 1.5v v gs = 2.0v v gs = 2.5v v gs = 3.0v v gs =4.0v v gs = 4.5v r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.2 0.4 0.6 0.8 1.0 1.2 -50 -25 0 25 50 75 100 125 150 t , junction temperature( c) fig. 6 on-resistance variation with temperature j ? i = 150ma d i = 300ma d
dm c 2 990udj q document number: d s 3 9168 rev. 1 - 2 5 of 9 www.diodes.com september 2016 ? diodes incorporated dm c 2 990udj q new product advance information advance information new product typical characteristics - n - channel (cont.) 1 10 100 1,000 2 4 6 8 10 12 14 16 18 20 v , drain - source voltage (v) fig. 10 typical drain - source leakage current vs. voltage ds i , l e a k a g e c u r r e n t ( n a ) d s s t = a 25c t = a 85c t = a 125c t = 150c a 0.001 0.1 1 1 10 100 p = 10s w dc p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10s w t = 150c t = 25c single pulse j(max) a 0.01 0.1 v , drain - source voltage (v) fig. 12 s oa, safe operation area ds i , d r a i n c u r r e n t ( a ) d r limited ds( on ) ? a c t c i d ss , leakage current ( n a) i d , drain current (a) q g ( n c) 0 0.2 0.4 0.6 0.8 1.0 1.2 -50 -25 0 25 50 75 100 125 150 t , junction temperature( c) fig. 7 gate threshold variation vs. ambient temperature j ? v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) i = 250 A d i = 1ma d 0 0.2 0.4 0.6 0.8 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 t = 25 C a v , source- drain voltage (v) fig. 8 diodes forward voltage vs. current sd i , s o u r c e c u r r e n t ( a ) s v , drain-source voltage (v) fig. 9 typical junction capacitance ds c t , j u n c t i o n c a p a c i t a n c e ( p f ) 50 40 30 20 10 0 10 15 20 5 0 f = 1mhz c iss c oss c rss 0 2 4 6 8 0 0.2 0.4 0.6 0.8 1 q - (nc) fig. 11 gate charge characteristics g v = 10v ds v , g a t e - s o u r c e v o l t a g e ( v ) g s
dm c 2 990udj q document number: d s 3 9168 rev. 1 - 2 6 of 9 www.diodes.com september 2016 ? diodes incorporated dm c 2 990udj q new product advance information advance information new product typical charact eristics - p - channel 0 0.2 0.4 0.6 0.8 0 0.5 1 1.5 2 2.5 3 - v , gate - source voltage (v) fig. 14 typical transfer characterist ics gs - i , d r a i n c u r r e n t ( a ) d v = - 5.0v ds t = 150c a t = 125c a t = 85c a t = 25c a t = - 55c a 3.5 4 0 0.4 1.6 1.2 2.0 0 0.2 0.4 0.6 0.8 v = - 4.5v gs - i , drain current (a) fig. 16 typical on - resistance vs. drain current and temperature d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = 150c a t = 85c a t = 25c a t = - 55c a t = 125c a 0.8 - 50 - 25 0 25 50 75 100 125 150 t , junction temperature ( c ) fig. 17 on - resistance variation with temperature j r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0.5 0.7 0.9 1.1 1.3 1.5 1.7 v = - 2.5v, i = - 150ma gs d v = - 4.5v, i = - 300ma gs d r d s(on) , drain - source on - resistance ( n or ma lize d ) (a) - i d , drain current (a) r d s(on) , drain - source on - resistance ( ? ) 0 0.2 0.4 0.6 0.8 0 0.5 1 1.5 2 2.5 3 3.5 4 -v , drain-source voltage (v) fig. 13 typical output characteristics ds - i , d r a i n c u r r e n t ( a ) d -i , drain-source current fig. 15 typical on-resistance vs. drain current and gate voltage d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 0 0.2 0.4 0.6 0.8 v = -1.8v gs v = -4.5v gs r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? -50 -25 0 25 50 75 100 125 150 t , junction temperature( c) fig. 18 on-resistance variation with temperature j ? 0 0.4 0.8 1.2 1.6 2.0 2.4 v = -2.5v, i = -150ma gs d v = -4.5v, i = -300ma gs d
dm c 2 990udj q document number: d s 3 9168 rev. 1 - 2 7 of 9 www.diodes.com september 2016 ? diodes incorporated dm c 2 990udj q new product advance information advance information new product typical characteristics - p - channel (cont.) 1 10 100 1,000 0 4 6 8 10 12 14 16 18 20 - v , drain - source voltage (v) fig. 22 typical leakage c urrent vs. drain - source voltage ds - i , l e a k a g e c u r r e n t ( n a ) d s s t = 150c a t = 125c a t = 85c a t = - 25c a 2 - i d ss , leakage current ( n a) 0.1 1 10 100 v , drain - source voltage (v) d s fig. 24 soa, safe operation area p = 10s w p = dc w p =1s w p =100ms w i , d r a i n c u r r e n t ( a ) d t = 150 c t = 25 c single pulse j(max) a r limited ds(on) p =1ms w p =100s w 0.001 0.01 0.1 1 10 p =10s w p = 10ms w i d , drain current (a) - - ? a c g , - - - 0 0.2 0.4 0.6 0.8 1.0 1.2 -50 -25 0 25 50 75 100 125 150 t , junction temperature( c) fig. 19 gate threshold variation vs. ambient temperature j ? - v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) i = -250 A d i = -1ma d 0 0.2 0.4 0.6 0.8 0.4 0.6 0.8 1.0 1.2 t = 25 C a v , source- drain voltage (v) fig. 20 diodes forward voltage vs. current sd i , s o u r c e c u r r e n t ( a ) s v , drain-source voltage (v) fig. 21 typical junction capacitance ds c , j u n c t i o n c a p a c i t a n c e ( p f ) t f = 1mhz c iss c oss c rss 0 10 20 30 40 50 0 2 4 6 8 10 q , total gate charge (nc) fig. 23 gate charge characteristics g 0 1 2 3 4 5 0 2 4 6 8 10 12 14 16 18 v = 10v, i = -4.5a ds d - v , g a t e s o u r c e v o l t a g e ( v ) g s
dm c 2 990udj q document number: d s 3 9168 rev. 1 - 2 8 of 9 www.diodes.com september 2016 ? diodes incorporated dm c 2 990udj q new product advance information advance information new product package outline dimensions pl ease see http://www.diodes.com/ package - outlines.html for the latest version. sot963 sot963 dim min max typ a 0.40 0.50 0.45 a1 0.00 0.05 -- b 0.10 0.20 0.15 c 0.120 0.180 0.150 d 0.95 1.05 1.00 e 0.95 1.05 1.00 e1 0.75 0.85 0.80 e -- -- 0.35 e1 -- -- 0.70 l1 0.05 0.15 0.10 all dimensions in mm c /w r (t) 0.001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration time (sec) fig. 25 transient thermal resistance d = 0.9 d = 0.7 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 d = single pulse r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e r (t) = r(t)*r r = 356c/w duty cycle, d = t1/t2 ?? ? ja ja ja e1 e d e1 a c l1 e seating plane a1 b
dm c 2 990udj q document number: d s 3 9168 rev. 1 - 2 9 of 9 www.diodes.com september 2016 ? diodes incorporated dm c 2 990udj q new product advance information advance information new product suggested pad layou t please see http://www.diodes.com/ package - outlines.html for the latest version. sot963 i mportant notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents unde r the laws of any jurisdiction). diodes incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any cust omer or user of this document or products described herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless agai nst all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthor ized sales channel. should customers purchase or use diodes incorporated products for any unintended or unautho rized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of personal injury or death associated wit h such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product nam es and markings noted herein may also be covered by one or more united states, inte rnational or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life suppo rt diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life suppor t devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided i n the labeling can be reas onably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expe cted to cause the failure of the life support device or to af fect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely responsible for all legal, reg ulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwiths tanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorpora ted and its representatives against any damages arising out of the use of diodes incorporat ed products in such safety - critical, life support devices or systems. copyright ? 201 6 , diodes incorporated www.diodes.com dimensions value (in mm) c 0.350 x 0.200 y 0.200 y1 1.100 c y1 x y
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